Rainbow-electronics ATmega32L Manual de usuario descargar pdf (Pagina 263)

263

ATmega32(L)

2503C–AVR–10/02

Programming the EEPROM The EEPROM is organized in pages, see Table 112 on page 258. When programming

the EEPROM, the program data is latched into a page buffer. This allows one page of

data to be programmed simultaneously. The programming algorithm for the EEPROM

data memory is as follows (refer to “Programming the Flash” on page 260 for details on

Command, Address and Data loading):

1. A: Load Command “0001 0001”.

2. G: Load Address High Byte ($00 - $FF)

3. B: Load Address Low Byte ($00 - $FF)

4. C: Load Data ($00 - $FF)

5. E: Latch data (give PAGEL a positive pulse)

K: Repeat 3 through 5 until the entire buffer is filled

L: Program EEPROM page

1. Set BS1 to “0”.

2. Give WR

a negative pulse. This starts programming of the EEPROM page.

RDY/BSY

goes low.

3. Wait until to RDY/BSY goes high before programming the next page. (See Fig-

ure 130 for signal waveforms)

Figure 130. Programming the EEPROM Waveforms

Reading the Flash The algorithm for reading the Flash memory is as follows (refer to “Programming the

Flash” on page 260 for details on Command and Address loading):

1. A: Load Command “0000 0010”.

2. G: Load Address High Byte ($00 - $FF)

3. B: Load Address Low Byte ($00 - $FF)

4. Set OE

to “0”, and BS1 to “0”. The Flash word low byte can now be read at

DATA.

RDY/BSY

RESET +12V

PAGEL

BS2

0x11 ADDR. HIGH

DATA

ADDR. LOW DATA ADDR. LOW DATA XX

XA1

XA0

BS1

XTAL1

AGB CEBCE L

1 2 ... 258 259 260 261 262 263 264 265 266 267 268 ... 312 313

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Rainbow-electronics ATmega32L Manual de usuario Pagina 263

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