Rainbow-electronics BR24L16FVM-W Manual de usuario descargar pdf (Pagina 18)

BR24L16-W / BR24L16F-W / BR24L16FJ-W /

Memory ICs

BR24L16FV-W / BR24L16FVM-W

18/25

•

circuit

circuit inhibit write operation at low voltage, and prevent an inadvertent write. Below the LV

voltage

(Typ.=1.2V), write operation is inhibited.

6) I / O circuit

•

Pull up resister of SDA pin

The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R

) properly,

by considering V

, I

characteristics of a controller which control the device and V

, I

characteristics of the device.

If large R

is chosen, clock frequency need to be slow. In case of small R

, the operating current increases.

•

Maximum of R

is determined by following factor.

①

SDA rise time determined by R

and the capacitance of bus line (CBUS) must be less than T

And the other timing must keep the conditions of AC spec.

②

When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I

) of the all devices

connected

to the bus and R

must be enough higher than input HIGH level of a controller and the device,

including noise margin 0.2 V

IL IL

MICRO

COMPUTER

BR24LXX

SDA PIN

THE CAPACITANCE OF

BUS LINE (CBUS)

VCC − ILRPU − 0.2VCC ≥ VIH

RPU ≤

0.8VCC − VIH

PU ≤

0.8×3−0.7×3

10×10

−6

≤ 300 [kΩ]

Examples : When V

CC=3V IL=10µA VIH=0.7VCC

According to

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Rainbow-electronics BR24L16FVM-W Manual de usuario Pagina 18

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