Rainbow-electronics DS1245Y_AB Manual de usuario

Copyright 1995 by Dallas Semiconductor Corporation.All Rights Reserved. For important information regardingpatents and other intellectual property r

DS1245Y/AB041497 10/12DS1245Y/AB NONVOLATILE SRAM, 34–PIN POWERCAP MODULEPKGDIMINCHESMIN NOM MAXA 0.920 0.925 0.930B 0.980 0.985 0.990C – – 0.080D 0.0

DS1245Y/AB041497 11/12DS1245Y/AB NONVOLATILE SRAM, 34–PIN POWERCAP MODULE WITH POWERCAPPKGDIMINCHESMIN NOM MAXA 0.920 0.925 0.930B 0.955 0.960 0.965C

DS1245Y/AB041497 12/12RECOMMENDED POWERCAP MODULE LAND PATTERNPKGDIMINCHESMIN NOM MAXA – 1.050 –B – 0.826 –C – 0.050 –D – 0.030 –E – 0.112 –ADBCE16 PL

DS1245Y/AB041497 2/12DESCRIPTIONThe DS1245 1024K Nonvolatile SRAMs are1,048,576–bit, fully static, nonvolatile SRAMs organized as131,072 words by 8 bi

DS1245Y/AB041497 3/12ABSOLUTE MAXIMUM RATINGS*Voltage on Any Pin Relative to Ground –0.3V to +7.0VOperating Temperature 0°C to 70°C, –40°C to +85°C fo

DS1245Y/AB041497 4/12(VCC=5V ± 5% for DS1245AB)AC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC=5V ± 10% for DS1245Y)PARAMETER SYMBOLDS1245AB–70DS

DS1245Y/AB041497 5/12(VCC=5V ± 5% for DS1245AB)AC ELECTRICAL CHARACTERISTICS (tA: See Note 10) (VCC=5V ± 10% for DS1245Y)PARAMETER SYMBOLDS1245Y-100DS

DS1245Y/AB041497 6/12READ CYCLEtRCtACCVIHVILVIHVILVIHVILtOHVIHtODtODVIHVOHVOLVOHVOLtCOEtCOEOUTPUTDATA VALIDDOUTOEADDRESSESVIHVIHtOEVILVILCE tCOSEE NOT

VCCVTP3.2VtFtPDtRtRECDATA RETENTIONTIMEtDRLEAKAGE CURRENTIL SUPPLIED FROMLITHIUM CELLWE, CESEE NOTE 11DS1245Y/AB041497 7/12WRITE CYCLE 2tWCVILVIHVILVI

DS1245Y/AB041497 8/12POWER–DOWN/POWER–UP TIMING (tA: See Note 10)PARAMETER SYMBOL MIN TYP MAX UNITS NOTESCE, WE at VIH beforePower–DowntPD0 µs 11VCC s

A1DIM MIN MAXA IN.MMB IN.MMC IN.MMD IN.MME IN.MMF IN.MMG IN.MMH IN.MMJ IN.MMK IN.MM1.68042.671.70043.180.72018.290.74018.800.3559.020.3759.520.0802.03