Rainbow-electronics AT28C17 Manual de usuario

Busca en linea o descarga Manual de usuario para Almacenamiento Rainbow-electronics AT28C17. Rainbow Electronics AT28C17 User Manual Manual de usuario

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1
Features
Fast Read Access Time - 150 ns
Fast Byte Write - 200
µs or 1 ms
Self-Timed Byte Write Cycle
Internal Address and Data Latches
Internal Control Timer
Automatic Clear Before Write
Direct Microprocessor Control
–DATA POLLING
READY/BUSY Open Drain Output
Low Power
30 mA Active Current
–100
µa CMOS Standby Current
High Reliability
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
5V
±
10% Supply
CMOS & TTL Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C17 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28C17 is a 16K memory
organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable
nonvolatile CMOS technology.
16K (2K x 8)
Parallel
EEPROMs
AT28C17
Rev. 0541B–10/98
Pin Configurations
Pin Name Function
A0 - A10 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
RDY/BUSY
Ready/Busy Output
NC No Connect
DC Don’t Connect
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
RDY/BUSY
NC
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
NC
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC
Top View
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
NC
RDY/BUSY
DC
VCC
WE
NC
(continued)
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Indice de contenidos

Pagina 1 - Parallel

1Features•Fast Read Access Time - 150 ns•Fast Byte Write - 200 µs or 1 ms•Self-Timed Byte Write Cycle– Internal Address and Data Latches– Internal Con

Pagina 2 - Absolute Maximum Ratings*

AT28C1710Packaging Information.045(1.14) X 45°PIN NO. 1IDENTIFY.025(.635) X 30° - 45°.012(.305).008(.203).021(.533).013(.330).530(13.5).490(12.4).030(

Pagina 4 - Operating Modes

© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Pagina 5 - (1)(2)(3)(4)

AT28C172The AT28C17 is accessed like a static RAM for the read orwrite cycles without the need of external components. Dur-ing a byte write, the addre

Pagina 6 - AC Write Characteristics

AT28C173Device OperationREAD:The AT28C17 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory location de

Pagina 7 - Data Polling Characteristics

AT28C174Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.3. VH = 12.0V ± 0.5V.DC and AC Operating RangeAT28C17-15Operating Temperatu

Pagina 8

AT28C175AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may be del

Pagina 9 - Die Products

AT28C176AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Typ Max UnitstAS, tOESAddress, OE Set-up Time 10 nstA

Pagina 10 - Packaging Information

AT28C177Notes: 1. These parameters are characterized and not 100% tested.2. See AC Read Characteristics.Data Polling WaveformsChip Erase WaveformstS =

Pagina 11

AT28C178

Pagina 12 - 0541B–10/98/xM

AT28C179Notes: 1. See Valid Part Numbers table below.2. The 28C17 200 ns and 250 ns speed selections have been removed from valid selections table and

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