Rainbow-electronics AT28C0101 Manual de usuario Pagina 1

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1
Features
Fast Read Access Time - 120 ns
Automatic Page Write Operation
Internal Address and Data Latches for 128-Bytes
Internal Control Timer
Fast Write Cycle Time
Page Write Cycle Time - 10 ms Maximum
1 to 128-Byte Page Write Operation
Low Power Dissipation
80 mA Active Current
300
µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
Endurance: 10
4
or 10
5
Cycles
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-Wide Pinout
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read
Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 120 ns with power dissipation of just 440 mW. When the device is
deselected, the CMOS standby current is less than 300
µ
A.
Rev. 0010C–10/98
Pin Configuration
Pin Name Function
A0 - A16 Addresses
CE Chip Enable
OE Output Enable
WE Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
AT28C010 Mil
1-Megabit
(128K x 8)
Paged Parallel
EEPROMs
AT28C010
Military
CERDIP, FLATPACK
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PGA
Top Vi ew
44 LCC
Top Vi ew
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A7
A6
A5
NC
NC
NC
A4
A3
A2
A1
A13
A8
A9
A11
NC
NC
NC
NC
OE
A10
CE
6
5
4
3
2
1
44
43
42
41
40
18
19
20
21
22
23
24
25
26
27
28
A0
I/O0
I/O1
I/O2
VSS
NC
I/O3
I/O4
I/O5
I/O6
I/O7
A15
A16
NC
NC
NC
NC
VCC
WE
NC
NC
A14
32 LCC
Top Vi ew
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
(continued)
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Indice de contenidos

Pagina 1 - Pin Configuration

1Features•Fast Read Access Time - 120 ns•Automatic Page Write OperationInternal Address and Data Latches for 128-BytesInternal Control Timer•Fast Writ

Pagina 2

AT28C010 Mil10Note: 1. See Valid Part Number table below. AT28C010 Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive

Pagina 3

AT28C010 Mil11Note: 1. See Valid Part Number table below. 5962-38267 Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActiv

Pagina 4

AT28C010 Mil12Valid Part NumbersThe following table lists standard Atmel products that can be ordered.Device Numbers Speed Package and Temperature Com

Pagina 5

AT28C010 Mil13Packaging Information1.68(42.7)1.64(41.7)PIN1.610(15.5).570(14.5).098(2.49)MAX.005(.127)MIN.060(1.52).015(.381).023(.584).014(.356).065(

Pagina 6

AT28C010 Mil14Packaging Information30U, 30-Pin, Ceramic Pin Grid Array (PGA)Dimensions in Inches and (Millimeters)

Pagina 7

AT28C010 Mil15

Pagina 8

© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa

Pagina 9

AT28C010 Mil2The AT28C010 is accessed like a Static RAM for the reador write cycle without the need for external components.The device contains a 128-

Pagina 10 - AT28C010 Mil

AT28C010 Mil3Device OperationREAD: The AT28C010 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory loca

Pagina 11

AT28C010 Mil4Notes: 1. X can be VIL or VIH.2. Refer to AC Programming WaveformsDC and AC Operating RangeAT28C010-12 AT28C010-15 AT28C010-20 AT28C010-2

Pagina 12

AT28C010 Mil5AC Read Waveforms(1)(2)(3)(4)Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC.2. OE may b

Pagina 13

AT28C010 Mil6AC Write WaveformsWE ControlledCE ControlledAC Write CharacteristicsSymbol Parameter Min Max UnitstWCWrite Cycle Time 10 mstASAddress Set

Pagina 14

AT28C010 Mil7Page Mode Write Waveforms (1)(2)Notes: 1. A7 through A16 must specify the page address during each high to low transition of WE (or CE).2

Pagina 15

AT28C010 Mil8Software DataProtection Enable Algorithm(1)Notes: 1. Data Format: I/O7 - I/O0 (Hex);Address Format: A14 - A0 (Hex).2. Write Protect state

Pagina 16 - 0010C–10/98/xM

AT28C010 Mil9Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics. Data Polling WaveformsNotes: 1. These p

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