Rainbow-electronics ATV750BL Manual de usuario descargar pdf (Pagina 12)

ATV750B(L)

0301I–08/01

Erasure

Characteristics

The entire memory array of an ATV750B is erased after exposure to ultraviolet light at a wave-

length of 2537 Å. Complete erasure is assured after a minimum of 20 minutes exposure using

12,000 µW/cm

intensity lamps spaced one inch away from the chip. Minimum erase time for

lamps at other intensity ratings can be calculated from the minimum integrated erasure dose

of 15 W

•sec/cm

. To prevent unintentional erasure, an opaque label is recommended to cover

the clear window on any UV-erasable PLD which will be subjected to continuous fluorescent

indoor lighting or sunlight.

Atmel CMOS

PLDs

The ATV750B utilizes an advanced 0.65-micron CMOS EPROM technology. This technol-

ogy’s state-of-art features are the optimum combination for PLDs:

• CMOS technology provides high-speed, low-power, and high noise immunity.

• EPROM technology is the most cos-effective method for producing PLDs – surpassing

bipolar fusible link technology in low cost, while providing the necessary

reprogrammability.

• EPROM reprogrammability, which is 100% tested before shipment, provides inherently

better programmability and reliability than one-time fusible PLDs.

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Rainbow-electronics ATV750BL Manual de usuario Pagina 12