pation limits often limits how small the MOSFET can be.
Again, the optimum occurs when the switching (AC)
losses equal the conduction (R
DS(ON)
) losses. High-side
switching losses do not usually become an issue until
the input is greater than approximately 15V.
Switching losses in the high-side MOSFET can become
an insidious heat problem when maximum AC adapter
voltages are applied, due to the squared term in the
CV
2
f switching loss equation. If the high-side MOSFET
chosen for adequate R
DS(ON)
at low battery voltages
becomes extraordinarily hot when subjected to
V
IN(MAX)
, reconsider the choice of MOSFET.
Calculating the power dissipation in Q1 due to switching
losses is difficult, since it must allow for difficult-to-quanti-
fy factors that influence the turn-on and turn-off times.
These factors include the internal gate resistance, gate
charge, threshold voltage, source inductance, and PC
board layout characteristics. The following switching loss
calculation provides only a very rough estimate and is no
substitute for breadboard evaluation, preferably including
a sanity check using a thermocouple mounted on Q1.
where C
RSS
is the reverse transfer capacitance of Q1,
and I
GATE
is the peak gate-drive source/sink current (1A
typ).
For the low-side MOSFET, Q2, the worst-case power dis-
sipation always occurs at maximum battery voltage:
PD(Q2) = (1 - V
OUT
/ V
IN(MAX)
)
✕
I
LOAD
2
✕
R
DS(ON)
The absolute worst case for MOSFET power dissipation
occurs under heavy overloads that are greater than
I
LOAD(MAX)
but are not quite high enough to exceed the
current limit. To protect against this possibility, you must
“overdesign” the circuit to tolerate I
LOAD
= I
LIMIT(HIGH)
+
[(LIR / 2)
✕
I
LOAD(MAX)
], where I
LIMIT(HIGH)
is the maxi-
mum valley current allowed by the current-limit circuit,
including threshold tolerance and sense-resistance vari-
ation. If short-circuit protection without overload protec-
tion is adequate, enable undervoltage protection, and
use I
LOAD(MAX
) to calculate component stresses.
Choose a Schottky diode D1 having a forward voltage
drop low enough to prevent the Q2 MOSFET body diode
from turning on during the dead time. As a general rule,
a diode having a DC current rating equal to 1/3 of the
load current is sufficient. This diode is optional, and if
efficiency isn’t critical it can be removed.
Applications Information
Dropout Performance
The output voltage adjust range for continuous-conduc-
tion operation is restricted by the nonadjustable 500ns
(max) minimum off-time one-shot. For best dropout per-
formance, use the slower (200kHz) on-time settings.
When working with low input voltages, the duty-factor
limit must be calculated using worst-case values for on-
and off-times. Manufacturing tolerances and internal
propagation delays introduce an error to the TON K-
factor. This error is greater at higher frequencies (Table
5). Also, keep in mind that transient response perfor-
mance of buck regulators operated close to dropout is
poor, and bulk output capacitance must often be
added (see the V
SAG
equation in the Transient
Response section).
The absolute point of dropout is when the inductor cur-
rent ramps down during the minimum off-time (∆I
DOWN
)
as much as it ramps up during the on-time (∆I
UP
). The
ratio h = ∆I
UP
/∆I
DOWN
indicates the circuit’s ability to
slew the inductor current higher in response to
increased load, and must always be greater than 1. As
h approaches 1, the absolute minimum dropout point,
the inductor current will be less able to increase during
each switching cycle, and V
SAG
will greatly increase
unless additional output capacitance is used.
A reasonable minimum value for h is 1.5, but this may
be adjusted up or down to allow trade-offs between
V
SAG
, output capacitance, and minimum operating
voltage. For a given value of h, the minimum operating
voltage can be calculated as:
where V
DROP1
and V
DROP2
are the parasitic voltage
drops in the discharge and charge paths, t
OFF(MIN)
is
from the Electrical Characteristics table, and K is taken-
from Table 5. The absolute minimum input voltage is cal-
culated with h = 1.
If the calculated V
IN(MIN)
is greater than the required
minimum input voltage, then operating frequency must
be reduced or output capacitance added to obtain an
acceptable V
SAG
. If operation near dropout is anticipat-
ed, calculate V
SAG
to be sure of adequate transient
response.
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