High-Efficiency, 3A, Current-Mode
Synchronous, Step-Down Switching Regulator
MAX15058
2 ______________________________________________________________________________________
ELECTRICAL CHARACTERISTICS
(V
IN
= 5V, T
A
= -40NC to +85NC, unless otherwise noted. Typical values are at T
A
= +25NC.) (Note 3)
ABSOLUTE MAXIMUM RATINGS
Note 1: LX has internal clamp diodes to GND and IN. Applications that forward bias these diodes should not exceed the IC’s pack-
age power dissipation limits.
IN, PGOOD to GND ................................................-0.3V to +6V
LX to GND ..................................................-0.3V to (V
IN
+ 0.3V)
LX to GND .......................................-1V to (V
IN
+ 0.3V) for 50ns
EN, COMP, FB, SS/REFIN, SKIP to GND ...-0.3V to (V
IN
+ 0.3V)
LX Current (Note 1) ................................................... -6A to +6A
Output Short-Circuit Duration ....................................Continuous
Continuous Power Dissipation (T
A
= +70NC)
9-Bump WLP Multilayer Board
(derate 14.1mW/NC above T
A
= +70NC) ....................1127mW
Operating Temperature Range .......................... -40NC to +85NC
Storage Temperature Range ............................ -65NC to +150NC
Soldering Temperature (reflow) ......................................+260NC
WLP
Junction-to-Case Thermal Resistance (B
JC
) ...................26NC/W
Junction-to-Ambient Thermal Resistance (B
JA
) ..............71NC/W
Note 2: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
PACKAGE THERMAL CHARACTERISTICS (Note 2)
PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS
IN Voltage Range V
IN
2.7 5.5 V
IN Shutdown Supply Current V
EN
= 0V 0.2 2
FA
IN Supply Current I
IN
V
EN
= 5V, V
FB
= 0.65V, no switching 1.56 2.3 mA
V
IN
Undervoltage Lockout
Threshold
LX starts switching, V
IN
rising 2.6 2.7 V
V
IN
Undervoltage Lockout
Hysteresis
LX stops switching, V
IN
falling 200 mV
ERROR AMPLIFIER
Transconductance g
MV
1.5 mS
Voltage Gain A
VEA
90 dB
FB Set-Point Accuracy V
FB
Over line, load, and temperature 594 600 606 mV
FB Input Bias Current I
FB
V
FB
= 0.6V -500 +500 nA
COMP to Current-Sense
Transconductance
g
MC
18 A/V
COMP Clamp Low V
FB
= 0.65V, V
SS
= 0.6V 0.94 V
POWER SWITCHES
LX On-Resistance, High-Side
pMOS
30
mI
LX On-Resistance, Low-Side
nMOS
18
mI
High-Side Switch Current-Limit
Threshold
I
HSCL
5 A
Low-Side Switch Sink Current-
Limit Threshold
4 A
Low-Side Switch Source Current-
Limit Threshold
5 A
(16 paginas)
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