1Features•Single 3.3V ± 10% Supply•Fast Read Access Time - 200 ns•Automatic Page Write Operation– Internal Address and Data Latches for 128 Bytes– Int
AT28LV01010Packaging Information.045(1.14) X 45°PIN NO.1IDENTIFY.025(.635) X 30 45.012(.305).008(.203).021(.533).013(.330).530(13.5.490(12.4.030(.762
AT28LV01011
© Atmel Corporation 1998.Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company’s standa
AT28LV0102The AT28LV010 is accessed like a Static RAM for the reador write cycle without the need for external components.The device contains a 128-by
AT28LV0103Device OperationREAD: The AT28LV010 is accessed like a Static RAM.When CE and OE are low and WE is high, the data storedat the memory locati
AT28LV0104Notes: 1. X can be VIL or VIH.2. Refer to AC Programming Waveforms.DC and AC Operating RangeAT28LV010-20 AT28LV010-25Operating Temperature (
AT28LV0105AC Read CharacteristicsSymbol ParameterAT28LV010-20 AT28LV010-25UnitsMin Max Min MaxtACCAddress to Output Delay 200 250 nstCE(1)CE to Output
AT28LV0106Note: 1. All write operations must be preceded by the SDP command sequence.AC Write WaveformsWE ControlledCE ControlledAC Write Characterist
AT28LV0107Programming AlgorithmNotes:1. Data Format: I/O7 - I/O0 (Hex); Address Format: A14 - A0 (Hex).2. Data protect state will be re-activated at t
AT28LV0108Notes: 1. These parameters are characterized and not 100% tested.2. See AC Read CharacteristicsData Polling WaveformsNotes: 1. These paramet
AT28LV0109Note: 1. See Valid Part Numbers table below.Ordering Information(1)tACC(ns)ICC (mA)Ordering Code Package Operation RangeActive Standby200 15
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