Rainbow-electronics AT45DB021B Manual de usuario

1Features• Single 2.7V - 3.6V Supply• Serial Peripheral Interface (SPI) Compatible• Page Program Operation– Single Cycle Reprogram (Erase and Program)

10AT45DB021B1937F–DFLSH–10/02Note: In Tables 2 and 3, an SCK mode designation of “Any” denotes any one of the four modes of operation (Inactive Clock

11AT45DB021B1937F–DFLSH–10/02Note: r = Reserved BitP = Page Address BitB = Byte/Buffer Address Bitx=Don’tCareTable 4. Detailed Bit-level Addressing Se

12AT45DB021B1937F–DFLSH–10/02Note: 1. After power is applied and VCCis at the minimum specified datasheet value, the system should wait 20 ms before a

13AT45DB021B1937F–DFLSH–10/02AC CharacteristicsSymbol Parameter Min Max UnitsfSCKSCK Frequency 20 MHzfCARSCK Frequency for Continuous Array Read 20 MH

14AT45DB021B1937F–DFLSH–10/02Input Test Waveformsand MeasurementLevelstR,tF< 3 ns (10% to 90%)Output Test LoadAC WaveformsTwo different timing diag

15AT45DB021B1937F–DFLSH–10/02Reset Timing (Inactive Clock Polarity Low Shown)Note: The CS signal should be in the high state before the RESET signal i

16AT45DB021B1937F–DFLSH–10/02Write Operations The following block diagram and waveforms illustrate the various write sequencesavailable.Main Memory Pa

17AT45DB021B1937F–DFLSH–10/02Read Operations The following block diagram and waveforms illustrate the various read sequencesavailable.Main Memory Page

18AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity LowContinuous Array Read (Opcode: 68H)Main Memory Page Read (Opc

19AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity Low (Continued)Buffer Read (Opcode: 54H or 56H)Status Register R

2AT45DB021B1937F–DFLSH–10/02EEPROM emulation (bit or byte alterability) is easily handled with a self-contained threestep Read-Modify-Write operation.

20AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity HighContinuous Array Read (Opcode: 68H)Main Memory Page Read (Op

21AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – Inactive Clock Polarity High (Continued)Buffer Read (Opcode: 54H or 56H)Status Register

22AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – SPI Mode 0Continuous Array Read (Opcode: E8H)Main Memory Page Read (Opcode: D2H)SI11XXXC

23AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – SPI Mode 0 (Continued)Buffer Read (Opcode: D4H or D6H)Status Register Read (Opcode: D7H)

24AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – SPI Mode 3Continuous Array Read (Opcode: E8H)Main Memory Page Read (Opcode: D2H)SI11XXXC

25AT45DB021B1937F–DFLSH–10/02Detailed Bit-level Read Timing – SPI Mode 3 (Continued)Buffer Read (Opcode: D4H or D6H)Status Register Read (Opcode: D7H)

26AT45DB021B1937F–DFLSH–10/02Figure 1. Algorithm for Sequentially Programming or Reprogramming the Entire ArrayNotes: 1. This type of algorithm is use

27AT45DB021B1937F–DFLSH–10/02Figure 2. Algorithm for Randomly Modifying DataNotes: 1. To preserve data integrity, each page of a DataFlash sector must

28AT45DB021B1937F–DFLSH–10/02Ordering InformationfSCK(MHz)ICC(mA)Ordering Code Package Operation RangeActive Standby20 10 0.01 AT45DB021B-CCAT45DB021B

29AT45DB021B1937F–DFLSH–10/02Packaging Information9C1 – CBGA 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 9C1, 9-ball (3 x 3 Array

3AT45DB021B1937F–DFLSH–10/02Memory Architecture DiagramDevice OperationThe device operation is controlled by instructions from the host processor. The

30AT45DB021B1937F–DFLSH–10/0228R – SOIC 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 28R, 28-lead, 0.330" Body, Plastic Gull

31AT45DB021B1937F–DFLSH–10/028S2 – EIAJ SOIC2325 Orchard ParkwaySan Jose, CA 95131TITLEDRAWING NO.RREV. 8S2, 8-lead, 0.209" Body, Plastic Small

32AT45DB021B1937F–DFLSH–10/0228T – TSOP 2325 Orchard Parkway San Jose, CA 95131TITLEDRAWING NO.RREV. 28T, 28-lead (8 x 13.4 mm) Plastic Thin Small

Printed on recycled paper.© Atmel Corporation 2002.Atmel Corporation makes no warranty for the use of its products, other than those expressly contain

4AT45DB021B1937F–DFLSH–10/02cycle, allowing one continuous read operation without the need of additional addresssequences. To perform a continuous rea

5AT45DB021B1937F–DFLSH–10/02STATUS REGISTER READ: The status register can be used to determine the device’sready/busy status, the result of a Main Mem

6AT45DB021B1937F–DFLSH–10/02place in a maximum time of tEP. During this time, the status register will indicate that thepart is busy.BUFFER TO MAIN ME

7AT45DB021B1937F–DFLSH–10/02MAIN MEMORY PAGE PROGRAM THROUGH BUFFER: This operation is a combina-tion of the Buffer Write and Buffer to Main Memory Pa

8AT45DB021B1937F–DFLSH–10/02If a sector is programmed or reprogrammed sequentially page-by-page, then the pro-gramming algorithm shown in Figure 1 on

9AT45DB021B1937F–DFLSH–10/02WRITE PROTECT: If the WP pin is held low, the first 256 pages of the main memorycannot be reprogrammed. The only way to re